Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation | Zendy

QingTai Zhao | Zendy; U. Breuer | Zendy; E. Rije | Zendy; St. Lenk | Zendy; S. Mantl | Zendy

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Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

Author(s) -

QingTai Zhao,

U. Breuer,

E. Rije,

St. Lenk,

S. Mantl

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1863442

Subject(s) - schottky barrier , silicon , materials science , silicide , sulfur , schottky diode , optoelectronics , metallurgy , diode

The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi∕Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65eV to 0.07eV and increased correspondingly on p-Si(100).

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