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Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
Author(s) -
H. Pernegger,
S. Roe,
P. Weilhammer,
V. Eremin,
H. Frais-Kölbl,
E. Griesmayer,
H. Kagan,
S. Schnetzer,
R. Stone,
W. Trischuk,
Daniel J. Twitchen,
Andrew J. Whitehead
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1863417
Subject(s) - charge carrier , chemical vapor deposition , diamond , materials science , single crystal , space charge , electric field , carrier lifetime , detector , electron mobility , charge (physics) , optoelectronics , transient (computer programming) , particle detector , electrode , current (fluid) , analytical chemistry (journal) , electron , chemistry , optics , silicon , physics , operating system , quantum mechanics , computer science , composite material , thermodynamics , crystallography , chromatography
For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an alpha source close to the surface and measuring the induced current in the detector electrodes as a function of time

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