High-mobility InGaAs∕InAlAs pseudomorphic heterostructures on InP (001)
Author(s) -
X. Wallart,
B. Pinsard,
F. Mollot
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1858871
Subject(s) - heterojunction , molecular beam epitaxy , materials science , optoelectronics , electron mobility , fermi gas , epitaxy , layer (electronics) , quantum well , gallium arsenide , electron , nanotechnology , optics , physics , laser , quantum mechanics
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