Open AccessZinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
Author(s) -
A. Zubiaga,
F. Tuomisto,
F. Plazaola,
K. Saarinen,
José Antonio Millán-García,
J.F. Rommeluère,
J. Zúñiga–Pérez,
V. MuñozSanjosé
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1855412
Subject(s) - sapphire , vacancy defect , materials science , positron annihilation spectroscopy , chemical vapor deposition , layer (electronics) , substrate (aquarium) , metalorganic vapour phase epitaxy , positron annihilation , annihilation , spectroscopy , zinc , crystallography , condensed matter physics , positron , optoelectronics , epitaxy , composite material , chemistry , metallurgy , optics , electron , laser , physics , oceanography , quantum mechanics , geology
Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.Peer reviewe
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