Publisher's Note: “Thermal stability of the HfO2∕SiO2 interface for sub-0.1 μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy” [J. Appl. Phys. 96, 6362 (2004)]
Details
The content you want is available to Zendy users.Already have an account? Click here. to sign in.