Open AccessPublisher's Note: “Thermal stability of the HfO2∕SiO2 interface for sub-0.1 μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy” [J. Appl. Phys. 96, 6362 (2004)]
Author(s) -
N. Barrett,
O. Renault,
J.-F. Damlencourt,
F. Martín
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1851987
Subject(s) - oxide , materials science , metal , valence (chemistry) , thermal stability , core (optical fiber) , semiconductor , interface (matter) , optoelectronics , condensed matter physics , chemistry , chemical engineering , composite material , physics , metallurgy , engineering , organic chemistry , capillary number , capillary action
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