Open AccessElectron transport in In-rich InxGa1−xN films
Author(s) -
Shih-Kai Lin,
Kun-Ta Wu,
Chao-Ping Huang,
ChiTe Liang,
Y. H. Chang,
Y. F. Chen,
P. Chang,
N. C. Chen,
Che-Hao Chang,
H. C. Peng,
ChuanFeng Shih,
K. S. Liu,
TaiYuan Lin
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1847694
Subject(s) - electrical resistivity and conductivity , degenerate semiconductor , atmospheric temperature range , electron mobility , epitaxy , materials science , scattering , degenerate energy levels , thin film , metal , condensed matter physics , semiconductor , electron density , electron , optoelectronics , nanotechnology , optics , physics , metallurgy , thermodynamics , layer (electronics) , quantum mechanics
We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich InxGa1−xN (x=1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4K⩽T⩽285K). Therefore, InxGa1−xN (0.92⩽x⩽1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich InxGa1−xN (x=1, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich InxGa1−xN (x=1, 0.98, and 0.92) films.
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