Open AccessBuckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers
Author(s) -
C.-Y. Yu,
P.-W. Chen,
S.-R. Jan,
M.-H. Liao,
K.F. Liao,
C. W. Liu
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1846937
Subject(s) - thermal oxidation , materials science , wafer , buckling , photoluminescence , wafer bonding , layer (electronics) , silicon on insulator , thermal , oxidation process , composite material , silicon , optoelectronics , chemical engineering , physics , meteorology , engineering
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