Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass | Zendy

Prakash N. K. Deenapanray | Zendy; M. Petravić | Zendy; C. Jagadish | Zendy; M. Krispin | Zendy; F.D. Auret | Zendy

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Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Author(s) -

Prakash N. K. Deenapanray,

M. Petravić,

C. Jagadish,

M. Krispin,

F.D. Auret

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1846140

Subject(s) - doping , annealing (glass) , materials science , analytical chemistry (journal) , impurity , epitaxy , secondary ion mass spectrometry , atmospheric temperature range , arrhenius equation , deep level transient spectroscopy , ion , activation energy , chemistry , optoelectronics , silicon , nanotechnology , physics , organic chemistry , chromatography , layer (electronics) , meteorology , composite material

One of the authors P. N. K. D.d acknowledges the financial support of the Australian Research Council. A second sF. D. A.d is grateful to the National Research Foundation, South Africa, for its financial support.

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