Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals | Zendy

C. Dı́az-Guerra | Zendy; J. Vincent | Zendy; J. Piqueras | Zendy; V. Bermúdez | Zendy; E. Diéguez | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

Author(s) -

C. Dı́az-Guerra,

J. Vincent,

J. Piqueras,

V. Bermúdez,

E. Diéguez

Publication year - 2004

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1834727

Subject(s) - cathodoluminescence , materials science , doping , scanning electron microscope , spectroscopy , radiative transfer , spontaneous emission , photoluminescence , recombination , non radiative recombination , luminescence , molecular physics , analytical chemistry (journal) , optoelectronics , optics , chemistry , semiconductor , semiconductor materials , physics , laser , quantum mechanics , chromatography , composite material , biochemistry , gene

The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research