Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy | Zendy

Mariano Troccoli | Zendy; D. P. Bour | Zendy; S. Corzine | Zendy; G. E. Höfler | Zendy; Ashish Tandon | Zendy; D. E. Mars | Zendy; David J. Smith | Zendy; Laurent Diehl | Zendy; Federico Capasso | Zendy

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Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy

Author(s) -

Mariano Troccoli,

D. P. Bour,

S. Corzine,

G. E. Höfler,

Ashish Tandon,

D. E. Mars,

David J. Smith,

Laurent Diehl,

Federico Capasso

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1834715

Subject(s) - continuous wave , epitaxy , cascade , optoelectronics , laser , metalorganic vapour phase epitaxy , materials science , quantum well , gallium arsenide , vapor phase , phase (matter) , quantum efficiency , chemistry , optics , physics , nanotechnology , organic chemistry , layer (electronics) , chromatography , thermodynamics

We report on the realization of InGaAs∕InAlAs quantum-cascade lasers grown by metalorganic vapor phase epitaxy operating in continuous wave with low-threshold current densities at temperatures as high as 188K. Threshold current densities of 950A∕cm2 and output powers of 125mW are measured at 80K, while 3mW of continuous output power are measured at 180K, with a threshold of 2.5kA∕cm2. In pulsed mode, peak output powers of more than 0.4W were obtained at 80K and of 160mW at 300K with thresholds of 700A∕cm2 and 2.75kA∕cm2, respectively.

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