Growth and morphology of 0.80eV photoemitting indium nitride nanowires | Zendy

Manuel Johnson | Zendy; Cheol Jin Lee | Zendy; Edith Bourret-Courchesne | Zendy; S. L. Konsek | Zendy; Shaul Aloni | Zendy; WeiQiang Han | Zendy; Alex Zettl | Zendy

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Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Author(s) -

Manuel Johnson,

Cheol Jin Lee,

Edith Bourret-Courchesne,

S. L. Konsek,

Shaul Aloni,

WeiQiang Han,

Alex Zettl

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1831563

Subject(s) - wurtzite crystal structure , nanowire , indium nitride , indium , materials science , transmission electron microscopy , photoluminescence , scanning electron microscope , vapor–liquid–solid method , nanotechnology , nitride , crystal (programming language) , optoelectronics , crystallography , chemistry , metallurgy , composite material , zinc , layer (electronics) , computer science , programming language

InN nanowires with high efficiency photoluminescence emission at 0.80eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50–100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the ⟨0001⟩ direction.

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