Concentration dependent interdiffusion in InGaAs∕GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy | Zendy

F. Bollet | Zendy; W. P. Gillin | Zendy; M. Hopkinson | Zendy; R. Gwilliam | Zendy

Open Access

Concentration dependent interdiffusion in InGaAs∕GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

Author(s) -

F. Bollet,

W. P. Gillin,

M. Hopkinson,

R. Gwilliam

Publication year - 2004

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1825613

Subject(s) - photoluminescence , diffraction , annealing (glass) , materials science , spectroscopy , x ray crystallography , analytical chemistry (journal) , homogeneity (statistics) , gallium arsenide , optoelectronics , condensed matter physics , crystallography , optics , chemistry , physics , statistics , mathematics , chromatography , quantum mechanics , composite material

\udA high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, is successful in modelling both the HRXRD and photoluminescence data

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