Open AccessPublisher’s Note: “Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution” [Appl. Phys. Lett. 85, 660 (2004)]
Author(s) -
Tae Hun Kim,
Jae Sung Sim,
Jong Duk Lee,
Hyung Cheol Shin,
ByungGook Park
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1822924
Subject(s) - trap (plumbing) , silicon nitride , nitride , oxide , charge density , silicon , materials science , silicon oxide , extraction (chemistry) , condensed matter physics , chemical physics , molecular physics , nanotechnology , optoelectronics , chemistry , physics , quantum mechanics , layer (electronics) , metallurgy , chromatography , meteorology
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