z-logo
open-access-imgOpen Access
Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors
Author(s) -
QingTai Zhao,
P. Kluth,
H.L. Bay,
St. Lenk,
S. Mantl
Publication year - 2004
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1808246
Subject(s) - materials science , optoelectronics , silicide , transistor , field effect transistor , fabrication , schottky barrier , mosfet , layer (electronics) , schottky diode , nanotechnology , silicon , electrical engineering , medicine , alternative medicine , pathology , voltage , diode , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom