Vertically emitting annular Bragg lasers using polymer epitaxial transfer | Zendy

William M. J. Green | Zendy; Jacob Scheuer | Zendy; Guy A. DeRose | Zendy; Am Yariv | Zendy

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Vertically emitting annular Bragg lasers using polymer epitaxial transfer

Author(s) -

William M. J. Green,

Jacob Scheuer,

Guy A. DeRose,

Am Yariv

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1807970

Subject(s) - lasing threshold , materials science , optoelectronics , laser , distributed bragg reflector , planar , semiconductor laser theory , resonator , fabrication , substrate (aquarium) , optics , distributed bragg reflector laser , wavelength , epitaxy , semiconductor , nanotechnology , medicine , oceanography , physics , computer graphics (images) , alternative medicine , pathology , layer (electronics) , computer science , geology

Fabrication of a planar semiconductor microcavity, composed of cylindrical Bragg reflectors surrounding a radial defect, is demonstrated. A versatile polymer bonding process is used to transfer active InGaAsP resonators to a low-index transfer substrate. Vertical emission of in-plane modes lasing at telecom wavelengths is observed under pulsed optical excitation with a submilliwatt threshold.

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