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InxGa1−xN multiple quantum wells (QWs) with [0001], ⟨112¯2⟩, and ⟨112¯0⟩ orientations have been fabricated by means of the regrowth technique on patterned GaN template with striped geometry, normal planes of which are (0001) and {112¯0}, on sapphire substrates. It was found that photoluminescence intensity of the {112¯2} QW is the strongest among the three QWs, and the internal quantum efficiency of the {112¯2} QW was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {112¯2} QW was about 0.38ns at low temperature, which was 3.8 times shorter than that of conventional [0001]-oriented InxGa1−xN QWs emitting at a similar wavelength of about 400nm. These findings strongly suggest the achievement of stronger oscillator strength owing to the suppression of piezoelectric fields.

Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique