Impurity free vacancy disordering of InGaAs quantum dots | Zendy

P. Lever | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Impurity free vacancy disordering of InGaAs quantum dots

Author(s) -

P. Lever,

Hark Hoe Tan,

C. Jagadish

Publication year - 2004

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1803948

Subject(s) - quantum dot , annealing (glass) , indium , vacancy defect , materials science , condensed matter physics , impurity , band gap , gallium arsenide , electron , optoelectronics , chemistry , physics , metallurgy , organic chemistry , quantum mechanics

The effect of thermal interdiffusion on In(Ga)As∕GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO2, Si3N4, and electron-beam evaporated TiO2 layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100meV to be obtained across the sample.

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