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Superconductivity in diamond thin films well above liquid helium temperature
Author(s) -
Yoshihiko Takano,
Masanori Nagao,
Isao Sakaguchi,
M. Tachiki,
Takeshi Hatano,
Kensaku Kobayashi,
Hitoshi Umezawa,
Hiroshi Kawarada
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1802389
Subject(s) - diamond , chemical vapor deposition , materials science , superconductivity , material properties of diamond , boron , thermal conductivity , thin film , doping , semiconductor , condensed matter physics , nanotechnology , electrical resistivity and conductivity , optoelectronics , composite material , chemistry , physics , organic chemistry , quantum mechanics
Diamond has always been adored as a jewel. Even more fascinating is itsoutstanding physical properties; it is the hardest material known in the worldwith the highest thermal conductivity. Meanwhile, when we turn to itselectrical properties, diamond is a rather featureless electrical insulator.However, with boron doping, it becomes a p-type semiconductor, with boronacting as a charge acceptor. Therefore the recent news of superconductivity inheavily boron-doped diamond synthesized by high pressure sintering was receivedwith considerable surprise. Opening up new possibilities for diamond-basedelectrical devices, a systematic investigation of these phenomena clearly needsto be achieved. Here we show unambiguous evidence of superconductivity in adiamond thin film deposited by a chemical vapor deposition (CVD) method.Furthermore the onset of the superconducting transition is found to be 7.4K,which is higher than the reported value in ref(7) and well above helium liquidtemperature. This finding establishes the superconductivity to be a universalproperty of boron-doped diamond, demonstrating that device application isindeed a feasible challenge.Comment: 6 pages, 3 figure

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