Formation of columnar (In,Ga)As quantum dots on GaAs(100) | Zendy

Jun He | Zendy; R. Nötzel | Zendy; P. Offermans | Zendy; P. M. Koenraad | Zendy; Qian Gong | Zendy; G. J. Hamhuis | Zendy; T. J. Eijkemans | Zendy; J. H. Wolter | Zendy

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Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Author(s) -

Jun He,

R. Nötzel,

P. Offermans,

P. M. Koenraad,

Qian Gong,

G. J. Hamhuis,

T. J. Eijkemans,

J. H. Wolter

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1801172

Subject(s) - quantum dot , molecular beam epitaxy , photoluminescence , materials science , monolayer , laser linewidth , scanning tunneling microscope , optoelectronics , microscopy , gallium arsenide , spectroscopy , epitaxy , layer (electronics) , nanotechnology , optics , physics , laser , quantum mechanics

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

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