Epitaxial BiFeO3 thin films on Si | Zendy

Junling Wang | Zendy; Haimei Zheng | Zendy; Zhijun Ma | Zendy; S. Prasertchoung | Zendy; Manfred Wuttig | Zendy; R. Droopad | Zendy; Jiangying Yu | Zendy; K. Eisenbeiser | Zendy; R. Ramesh | Zendy

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Epitaxial BiFeO3 thin films on Si

Author(s) -

Junling Wang,

Haimei Zheng,

Zhijun Ma,

S. Prasertchoung,

Manfred Wuttig,

R. Droopad,

Jiangying Yu,

K. Eisenbeiser,

R. Ramesh

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1799234

Subject(s) - materials science , epitaxy , piezoelectricity , thin film , transmission electron microscopy , polarization (electrochemistry) , optoelectronics , electrode , piezoelectric coefficient , nanotechnology , layer (electronics) , composite material , chemistry

BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ∼45μC∕cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ∼60pm∕V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.

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