Open AccessComment on “Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni∕Au films” [J. Appl. Phys. 86, 4491 (1999)]
Author(s) -
L. S. Yu,
D. Qiao
Publication year - 2004
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1793357
Subject(s) - ohmic contact , non blocking i/o , materials science , contact resistance , band diagram , quantum tunnelling , condensed matter physics , chemistry , optoelectronics , band gap , physics , nanotechnology , layer (electronics) , biochemistry , catalysis
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