Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering | Zendy

T. Katsuno | Zendy; Shugo Nitta | Zendy; Hitoe Habuchi | Zendy; Vlad Stolojan | Zendy; S. Ravi P. Silva | Zendy

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Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering

Author(s) -

T. Katsuno,

Shugo Nitta,

Hitoe Habuchi,

Vlad Stolojan,

S. Ravi P. Silva

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1792384

Subject(s) - photoconductivity , materials science , sputtering , carbon nitride , amorphous carbon , nitride , amorphous solid , chemical vapor deposition , carbon fibers , thin film , graphite , substrate (aquarium) , analytical chemistry (journal) , layer (electronics) , optoelectronics , chemistry , nanotechnology , composite material , crystallography , organic chemistry , oceanography , photocatalysis , geology , composite number , catalysis

We report on the growth of amorphous carbon nitride films (a-CNx) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CNx:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 105, defined as the ratio of the photoconductivity σp to the dark conductivity σd and is the highest value reported thus far. We believe that the carriers generated by the monochromatic light (photon energy 6.2eV) in the a-CNx:LL films are primarily electrons, with the photoconductivity shown to increase with substrate deposition temperature.

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