Impact ionization coefficients of 4H silicon carbide | Zendy

Tetsuo Hatakeyama | Zendy; Takanobu Watanabe | Zendy; Takashi Shinohe | Zendy; Kazutoshi Kojima | Zendy; Kazuo Arai | Zendy; Nobuyuki Sano | Zendy

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Impact ionization coefficients of 4H silicon carbide

Author(s) -

Tetsuo Hatakeyama,

Takanobu Watanabe,

Takashi Shinohe,

Kazutoshi Kojima,

Kazuo Arai,

Nobuyuki Sano

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1784520

Subject(s) - impact ionization , silicon carbide , materials science , ionization , avalanche breakdown , breakdown voltage , wafer , diode , silicon , avalanche diode , anisotropy , epitaxy , optoelectronics , voltage , chemistry , optics , electrical engineering , composite material , physics , ion , organic chemistry , layer (electronics) , engineering

Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (11[overline 2]0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to impact ionization of these p+n diodes. The breakdown voltage of a p+n diode on a (11[overline 2]0) wafer is 60% of that on a (0001) wafer, and the extracted impact ionization coefficients of 4H silicon carbide show large anisotropy. We have shown that the anisotropy of the impact ionization coefficients is related to the anisotropy of carrier heating and drift velocity, which are due to the highly anisotropic electronic structure of 4H silicon carbide

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