Improvements of InGaN∕GaN quantum-well interfaces and radiative efficiency with InN interfacial layers | Zendy

YungChen Cheng | Zendy; ChengWen Wu | Zendy; Meng-Kuo Chen | Zendy; Chih-Chiang Yang | Zendy; Zhe-Chuan Feng | Zendy; Gang Alan Li | Zendy; Jer-Ren Yang | Zendy; A. Rosenauer | Zendy; Kung-Je Ma | Zendy

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Improvements of InGaN∕GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

Author(s) -

YungChen Cheng,

ChengWen Wu,

Meng-Kuo Chen,

Chih-Chiang Yang,

Zhe-Chuan Feng,

Gang Alan Li,

Jer-Ren Yang,

A. Rosenauer,

Kung-Je Ma

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1767603

Subject(s) - quantum well , photoluminescence , materials science , optoelectronics , wide bandgap semiconductor , monolayer , spontaneous emission , photon , optics , nanotechnology , physics , laser

The optical properties and nanostructures of two InGaN∕GaN quantum-well (QW) samples of slightly different structures are compared. In one of the samples, InN interfacial layers of a few monolayers are added to the structure between wells and barriers for improving the QW interface quality. Compared with the standard barrier-doped QW sample, the addition of the InN interfacial layers does improve the QW interface quality and hence the photon emission efficiency. The strain state analysis images show the high contrast between the clear QW interface in the sample with InN layers and the diffusive QW boundaries in the reference sample. The detection-energy-dependent photoluminescence excitation data reveal the consistent results.

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