Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5{micro}m and 15{micro}m GaN template layers. It was found that the electroluminescence emission of the 15{micro}m device was red-shifted by approximately 132meV. Triple-axis X-Ray Diffraction and Cross-Sectional Transmission Electron Microscopy show that the 15{micro}m templay layer device was virtually unstrained while the 5{micro}m layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry depth profiles show that the 15{micro}m template layer device had an average indium concentration of 11% higher than that of the 5{micro}m template layer device even though the structures were deposited during the same growth run. It was also found that the 15{micro}m layer device had a higher growth rate than the 5{micro}m template layer device. This difference in indium concentration and growth rate was due to changes in thermodynamic limitations caused by strain differences in the template layers