Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | Zendy

Kian-Giap Gan | Zendy; ChiKuang Sun | Zendy; Steven P. DenBaars | Zendy; John E. Bowers | Zendy

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Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes

Author(s) -

Kian-Giap Gan,

ChiKuang Sun,

Steven P. DenBaars,

John E. Bowers

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1760211

Subject(s) - ultrashort pulse , materials science , optoelectronics , quantum well , laser , diode , valence (chemistry) , light emitting diode , semiconductor laser theory , wide bandgap semiconductor , relaxation (psychology) , condensed matter physics , optics , physics , quantum mechanics , psychology , social psychology

The ultrafast carrier dynamics in InGaN multiple-quantum-well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring technique. From the optical selection rules of TE and TM polarized light, one can selectively excite and probe different valence-subband-to-conduction-subband transitions in the MQW structure with different polarized pump and probe light. The subband structure of the MQW structure of the laser diode was calculated and is verified by electroluminescence measurement. Using this technique, ultrafast valence intersubband hole relaxation processes (τ<0.35 ps) were found to dominate the observed carrier dynamics.

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