Open AccessOrigin and repartition of the oxide fixed charges generated by electrical stress in memory tunnel oxide
Author(s) -
S. Bernardini,
Pascal Le Masson,
Michel Houssa,
F. Lalande
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1756681
Subject(s) - oxide , quantum tunnelling , dielectric , materials science , stress (linguistics) , capacitor , condensed matter physics , silc , dielectric strength , molecular physics , voltage , chemistry , optoelectronics , physics , metallurgy , linguistics , philosophy , quantum mechanics
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