Influence of O and C co-implantation on the lattice site of Er in GaN | Zendy

Bart de Vries | Zendy; V. Matias | Zendy; A. Vantomme | Zendy; U. Wahl | Zendy; E. Rita | Zendy; E. Alves | Zendy; A. M. L. Lopes | Zendy; J. G. Correia | Zendy

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Influence of O and C co-implantation on the lattice site of Er in GaN

Author(s) -

Bart de Vries,

V. Matias,

A. Vantomme,

U. Wahl,

E. Rita,

E. Alves,

A. M. L. Lopes,

J. G. Correia

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1756196

Subject(s) - annealing (glass) , materials science , doping , ion implantation , root mean square , electron , analytical chemistry (journal) , wide bandgap semiconductor , lattice (music) , oxygen , chemistry , ion , optoelectronics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , acoustics

The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900 °C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample

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