Neutron transmutation doped far-infrared p-Ge laser | Zendy

E. W. Nelson | Zendy; M. V. Dolguikh | Zendy; A. V. Muravjov | Zendy; Elena Flitsiyan | Zendy; Todd W. Du Bosq | Zendy; R. E. Peale | Zendy; S. H. Kleckley | Zendy; C. J. Fredricksen | Zendy; W.G. Vernetson | Zendy

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Neutron transmutation doped far-infrared p-Ge laser

Author(s) -

E. W. Nelson,

M. V. Dolguikh,

A. V. Muravjov,

Elena Flitsiyan,

Todd W. Du Bosq,

R. E. Peale,

S. H. Kleckley,

C. J. Fredricksen,

W.G. Vernetson

Publication year - 2004

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1753659

Subject(s) - germanium , doping , laser , materials science , lasing threshold , impurity , crystal (programming language) , acceptor , optoelectronics , neutron , analytical chemistry (journal) , optics , chemistry , silicon , condensed matter physics , physics , nuclear physics , wavelength , chromatography , organic chemistry , computer science , programming language

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

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