Electron Requirements of Bonds in Metal Borides | Zendy

Robert W. Johnson | Zendy; A.H. Daane | Zendy

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Electron Requirements of Bonds in Metal Borides

Author(s) -

Robert W. Johnson,

A.H. Daane

Publication year - 1963

Publication title -

the journal of chemical physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.071

H-Index - 357

eISSN - 1089-7690

pISSN - 0021-9606

DOI - 10.1063/1.1733675

Subject(s) - boride , yttrium , atom (system on chip) , hall effect , materials science , boron , metal , metallic bonding , electron , semiconductor , free electron model , compound semiconductor , atomic physics , electrical resistivity and conductivity , condensed matter physics , crystallography , chemistry , metallurgy , nanotechnology , physics , nuclear physics , quantum mechanics , optoelectronics , layer (electronics) , computer science , embedded system , oxide , epitaxy

Electrical measurements have been made on CaB6, SrB6, BaB6, YB2, YB4, YB6, and YB12 for the purpose of testing models of the electronic structure of the boron atoms in the four boride types represented. The compounds CaB6, SrB6, and BaB6 were found to be semiconductors. The Hall coefficients of YB2, YB6, and YB12 were measured and found to correspond to one free electron per yttrium atom in each compound. The Hall coefficient of YB4 was also measured, but could not be interpreted because the free‐electron theory does not provide a theoretical value for comparison with experiment. The results are in agreement with the models which have been proposed.

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