Open AccessSb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy
Author(s) -
Yu. G. Sadofyev,
S. R. Johnson,
S. A. Chaparro,
Yu Cao,
Ding Ding,
J.-B. Wang,
Klaus Franzreb,
Y.–H. Zhang
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1715153
Subject(s) - molecular beam epitaxy , dopant , doping , flux (metallurgy) , materials science , electrical resistivity and conductivity , surface roughness , epitaxy , analytical chemistry (journal) , antimony , morphology (biology) , crystal growth , conductivity , surface finish , chemistry , optoelectronics , crystallography , nanotechnology , metallurgy , layer (electronics) , composite material , engineering , chromatography , biology , electrical engineering , genetics
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