Open AccessBias-induced threshold voltages shifts in thin-film organic transistors
Author(s) -
Henrique L. Gomes,
Peter Stallinga,
Franco Dinelli,
M. Murgia,
Fabio Biscarini,
Dago M. de Leeuw,
T. Muck,
J. Geurts,
L. W. Molenkamp,
V. Wagner
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1713035
Subject(s) - thin film transistor , threshold voltage , materials science , transistor , metastability , optoelectronics , organic semiconductor , thin film , voltage , formalism (music) , semiconductor , silicon , biasing , condensed matter physics , nanotechnology , chemistry , physics , art , musical , organic chemistry , layer (electronics) , visual arts , quantum mechanics
An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics
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