Open AccessScattering mechanisms in high-mobility strained Ge channels
Author(s) -
B. Rössner,
Daniel Chrastina,
Giovanni Isella,
H. von Känel
Publication year - 2004
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1707223
Subject(s) - impurity , scattering , electron mobility , materials science , doping , germanium , chemical vapor deposition , limiting , optoelectronics , chemistry , silicon , optics , physics , mechanical engineering , organic chemistry , engineering
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