Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1−xN heterostructure | Zendy

S. Satpathy | Zendy; Zorica Popović | Zendy; W. C. Mitchel | Zendy

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Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1−xN heterostructure

Author(s) -

S. Satpathy,

Zorica Popović,

W. C. Mitchel

Publication year - 2004

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1704869

Subject(s) - heterojunction , band offset , bowing , asymmetry , condensed matter physics , materials science , density functional theory , band gap , wide bandgap semiconductor , charge carrier density , electron density , ab initio quantum chemistry methods , electronic band structure , ab initio , offset (computer science) , electron , valence band , molecular physics , chemistry , optoelectronics , computational chemistry , physics , philosophy , theology , organic chemistry , doping , quantum mechanics , molecule , computer science , programming language

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