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Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, I<SUB>C versus V<SUB>CE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic circuitry, are experimentally demonstrated. ? 2004 American Institute of Physics. @DOI: 10.1063/1.1690109#

applied physics letters

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration