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Comments on ``Dependence of barrier height of metal-semiconductor contact (Au–GaAs) on thickness of semiconductor surface layer''
Author(s) -
C. H. Wei,
S. Yee
Publication year - 1974
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1663356
Subject(s) - oxide , condensed matter physics , semiconductor , metal , materials science , layer (electronics) , barrier layer , surface (topology) , chemistry , physics , composite material , optoelectronics , metallurgy , geometry , mathematics

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