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Comments on barrier changes in stressed metal‐semiconductor contacts
Author(s) -
Stephen J. Fonash
Publication year - 1974
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1663013
Subject(s) - stress (linguistics) , silicon , semiconductor , materials science , semiconductor device , metal , work (physics) , engineering physics , condensed matter physics , nanotechnology , optoelectronics , physics , metallurgy , thermodynamics , philosophy , linguistics , layer (electronics)

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