Open AccessRecombination Lifetimes in Gamma-Irradiated Silicon
Author(s) -
Ralph A. Hewes
Publication year - 1968
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1656933
Subject(s) - irradiation , silicon , annealing (glass) , photoconductivity , recombination , materials science , carrier lifetime , radiation damage , boron , oxygen , conduction band , analytical chemistry (journal) , crystallographic defect , deep level transient spectroscopy , shallow donor , radiochemistry , radiation , electron beam processing , electron , chemistry , optoelectronics , crystallography , optics , nuclear physics , doping , physics , metallurgy , biochemistry , organic chemistry , chromatography , gene
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