Open AccessErratum: Surface depletion region width dependence of threshold voltage shift of ion-implanted MOS transistor
Author(s) -
Mototaka Kamoshida,
O. Kudoh
Publication year - 1974
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1655392
Subject(s) - threshold voltage , transistor , materials science , optoelectronics , ion , ion implantation , voltage , depletion region , atomic physics , condensed matter physics , chemistry , electrical engineering , physics , semiconductor , engineering , organic chemistry
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