New Thin-Film Tunnel Triode Using Amorphous Semiconductors | Zendy

R. F. Shaw | Zendy; H. Fritzsche | Zendy; M. Silver | Zendy; P. Smejtek | Zendy; S. Holmberg | Zendy; Stanford R. Ovshinsky | Zendy

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New Thin-Film Tunnel Triode Using Amorphous Semiconductors

Author(s) -

R. F. Shaw,

H. Fritzsche,

M. Silver,

P. Smejtek,

S. Holmberg,

Stanford R. Ovshinsky

Publication year - 1972

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1654128

Subject(s) - triode , semiconductor , amorphous semiconductors , materials science , optoelectronics , cathode , thin film , amorphous solid , semiconductor device , nanotechnology , capacitor , electrical engineering , chemistry , voltage , engineering , crystallography , layer (electronics)

A tunnel triode was fabricated using A12O3 dielectric to form the hot-electron tunnel cathode and an amorphous film of As34Te28Ge16S21Se1 to separate the base and collector. The structure of the device is shown in Fig. 1. The electrodes were all aluminum. A 2000-A emitter electrode was evaporated onto a glass substrate and anodized to form an A12O3 layer 125 A thick as described by Onn and Silver.1 This was then coated with a 125-A Al layer to form the base electrode followed by a 1500-A sputtered layer of the amorphous material over which was subsequently deposited a 2000-A collector electrode.

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