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A tunnel triode was fabricated using A12O3 dielectric to form the hot-electron tunnel cathode and an amorphous film of As34Te28Ge16S21Se1 to separate the base and collector. The structure of the device is shown in Fig. 1. The electrodes were all aluminum. A 2000-A emitter electrode was evaporated onto a glass substrate and anodized to form an A12O3 layer 125 A thick as described by Onn and Silver.1 This was then coated with a 125-A Al layer to form the base electrode followed by a 1500-A sputtered layer of the amorphous material over which was subsequently deposited a 2000-A collector electrode.

New Thin-Film Tunnel Triode Using Amorphous Semiconductors