Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN | Zendy

Jeong Min Baik | Zendy; Yoon Shon | Zendy; Tae Won Kang | Zendy; JongLam Lee | Zendy

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Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

Author(s) -

Jeong Min Baik,

Yoon Shon,

Tae Won Kang,

JongLam Lee

Publication year - 2004

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1647282

Subject(s) - ion implantation , ferromagnetism , materials science , electrical resistivity and conductivity , manganese , nitrogen , magnetic semiconductor , ion , nuclear magnetic resonance , analytical chemistry (journal) , crystallography , chemistry , condensed matter physics , doping , metallurgy , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics

N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases.open293

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