Comment on “Schottky diodes with a δ-doped near-surface layer” [J. Appl. Phys. 90, 6205 (2001)]
Author(s) -
V. I. Shashkin,
A. V. Murel
Publication year - 2004
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1637722
Subject(s) - schottky diode , doping , diode , schottky barrier , quantum tunnelling , planar , metal–semiconductor junction , condensed matter physics , optoelectronics , materials science , schottky effect , layer (electronics) , diffusion , semiconductor , physics , nanotechnology , quantum mechanics , computer graphics (images) , computer science
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