Open AccessClusters formation in ultralow-energy high-dose boron-implanted silicon
Author(s) -
F. Cristiano,
X. Hebras,
N. Cherkashin,
A. Claverie,
W. Lerch,
S. Paul
Publication year - 2003
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1637440
Subject(s) - ostwald ripening , boron , silicon , transmission electron microscopy , annealing (glass) , materials science , chemical physics , cluster (spacecraft) , ion implantation , crystallography , analytical chemistry (journal) , molecular physics , ion , nanotechnology , chemistry , optoelectronics , metallurgy , organic chemistry , chromatography , computer science , programming language
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