Open AccessInGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
Author(s) -
Anna Fontcuberta i Morral,
James M. Zahler,
Harry A. Atwater,
S. P. Ahrenkiel,
M. W. Wanlass
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1637429
Subject(s) - materials science , heterojunction , epitaxy , optoelectronics , wafer bonding , wafer , indium phosphide , photoluminescence , chemical vapor deposition , metalorganic vapour phase epitaxy , layer (electronics) , arsine , nanotechnology , gallium arsenide , chemistry , biochemistry , phosphine , catalysis
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