Observation of transition metals at shunt locations in multicrystalline silicon solar cells

By employing a combination of analytical tools including lock-in thermography and synchrotron-based x-ray fluorescencemicroscopy,transition metals have been identified at shunting locations in two types of low-cost multicrystalline silicon (mc-Si) solar cellmaterials: cast multicrystalline and ribbon growth on substrate (RGS). At a shunting location in the cast mc-Si cell, silver and titanium, both contact strip materials, have been identified at the shunting location, suggesting a process-induced error related to contact metallization. At a shunting location in the RGS cell, a material-specific shunting mechanism is described, involving channels of inverse conductivity type, where copper and iron are found. The possible roles of these metals in this shunting mechanism are discussed. These results illustrate the wide range of physical mechanisms involved with shunting in solar cells.