Open AccessResponse to “Comment on ‘Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing’ ” [Appl. Phys. Lett. 83, 5319 (2003)]
Author(s) -
Chang Min Jeon,
JongLam Lee
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1634694
Subject(s) - heterojunction , annealing (glass) , schottky barrier , materials science , optoelectronics , wide bandgap semiconductor , condensed matter physics , schottky diode , metallurgy , physics , diode
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