Open AccessHydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
Author(s) -
S. X. Li,
Junqiao Wu,
E. E. Haller,
W. Walukiewicz,
W. Shan,
Hai Lu,
W. J. Schaff
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1633681
Subject(s) - hydrostatic pressure , band gap , photoluminescence , nitride , materials science , diamond anvil cell , condensed matter physics , wide bandgap semiconductor , hydrostatic equilibrium , valence (chemistry) , alloy , pressure coefficient , chemistry , thermodynamics , high pressure , optoelectronics , nanotechnology , metallurgy , physics , organic chemistry , layer (electronics) , quantum mechanics
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