Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes | Zendy

Jiaming Sun | Zendy; T. Dekorsy | Zendy; W. Skorupa | Zendy; Bernd Schmidt | Zendy; M. Helm | Zendy

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Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes

Author(s) -

Jiaming Sun,

T. Dekorsy,

W. Skorupa,

Bernd Schmidt,

M. Helm

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1626809

Subject(s) - electroluminescence , exciton , boron , materials science , annealing (glass) , silicon , diode , recombination , electron , light emitting diode , optoelectronics , analytical chemistry (journal) , condensed matter physics , chemistry , nanotechnology , biochemistry , physics , organic chemistry , layer (electronics) , quantum mechanics , composite material , gene , chromatography

Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures.

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