X-ray Porosimetry as a Metrology to Characterize The Pore Structure of Low-k Dielectric Films
Author(s) -
Christopher L. Soles
Publication year - 2003
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1622531
Subject(s) - porosimetry , capillary condensation , materials science , dielectric , substrate (aquarium) , condensation , porosity , x ray reflectivity , desorption , analytical chemistry (journal) , scanning electron microscope , low k dielectric , silicon , porous medium , thin film , composite material , adsorption , chemistry , nanotechnology , chromatography , optoelectronics , thermodynamics , oceanography , physics , geology
X‐ray reflectivity porosimetry is a highly sensitive measurement method that utilizes the capillary condensation of a solvent vapor inside porous low‐k dielectric films on a silicon substrate. As the partial pressure of the solvent environment over the film increases, capillary condensation occurs in progressively larger pores. This results in an appreciable increase in the electron density of the film. By monitoring the changes in the critical angle for total X‐ray reflectance, one can directly calculate the average electron density, and therefore the solvent uptake. By invoking traditional porosimetry absorption/desorption analyses, characteristics such as porosity and the distribution of pore sizes can be extracted.
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