New infrared spectroscopic ellipsometer for low-k dielectric characterization | Zendy

Pierre Boher | Zendy

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New infrared spectroscopic ellipsometer for low-k dielectric characterization

Author(s) -

Pierre Boher

Publication year - 2003

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.1622524

Subject(s) - microelectronics , metrology , ellipsometry , characterization (materials science) , materials science , optics , signal to noise ratio (imaging) , infrared , dielectric , signal (programming language) , noise (video) , optoelectronics , computer science , physics , nanotechnology , thin film , artificial intelligence , image (mathematics) , programming language

A new infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has been recently developed at SOPRA. Its main features are the ability to measure on a small spot ( 80×200μm) with a high signal/noise ratio. A original patented optical design suppress back face reflection and insure good quality spectral measurements in the 600–7000cm−1 range. Excellent signal/noise ratio allows to perform measurements in less than 30s. All automation and real time analysis are included to offer an operator orientated metrology tool. Hereafter, the instrument is presented in details, and used to characterize different kinds of low‐k dielectrics.

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